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XP0C301|XP1C301 PDF预览

XP0C301|XP1C301

更新时间: 2024-12-01 23:33:55
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
5页 117K
描述
Composite Device - Composite Transistors

XP0C301|XP1C301 数据手册

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Composite Transistors  
XP0C301 (XP1C301)  
Silicon PNP epitaxial planar type (Tr1)  
Silicon NPN epitaxial planar type (Tr2)  
Unit: mm  
+0.05  
For general amplification  
0.12  
–0.02  
0.20 0.05  
5
4
3
Features  
Two elements incorporated into one package  
Reduction of the mounting area and assembly cost by one half  
1
2
0.65 0.65  
1.3 0.1  
2.0 0.1  
Basic Part Number  
10˚  
2SB0709A (2SB709A) + 2SD0601A (2SD601A)  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
1: Emitter (Tr1)  
2: Base (Tr1)  
Emitter (Tr2)  
EIAJ: SC-88A  
3: Base (Tr2)  
Tr1  
Collector-base voltage  
(Emitter open)  
VCBO  
60  
V
4: Collector (Tr2)  
5: Collector (Tr1)  
SMini5-G1 Package  
Collector-emitter voltage  
(Base open)  
VCEO  
VEBO  
50  
7  
V
V
Marking Symbol: 4R  
Emitter-base voltage  
(Collector open)  
Internal Connection  
Collector current  
IC  
ICP  
100  
200  
60  
mA  
mA  
V
5
4
Peak collector current  
Tr2  
Collector-base voltage  
(Emitter open)  
VCBO  
Tr1  
Tr2  
3
Collector-emitter voltage  
(Base open)  
VCEO  
VEBO  
50  
7
V
V
1
2
Emitter-base voltage  
(Collector open)  
Collector current  
IC  
ICP  
PT  
100  
200  
mA  
mA  
mW  
°C  
Peak collector current  
Overall Total power dissipation  
Junction temperature  
150  
Tj  
150  
Storage temperature  
Tstg  
55 to +150  
°C  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: December 2003  
SJJ00222CED  
1

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